? 2012 ixys corporation, all rights reserved v ces = 4000v i c110 = 40a v ce(sat) 3.2v IXEL40N400 ds99385b(09/12) symbol test conditions maximum ratings v ces t j = 25c to 150c 4000 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25c 90 a i c110 t c = 110c 40 a i cm pulse width limited by t jm , 1ms, v ge = 25v 400 a p c t c = 25c 380 w t j - 40 ... +150 c t jm 150 c t stg - 40 ... +150 c t l maximum lead temperature for soldering 300 c t sold 1.6 mm (0.062 in.) from case for 10s 260 c v isol i isol < 1ma, 50/60 hz, t = 1 minute 4000 v~ f c mounting force 30..170 / 7..36 nm/lb-in. weight 8g very high voltage igbt g = gate c = collector e = emitter isoplus i5-pak tm g c e isolated tab symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v ge(th) i c = 10ma, v ce = v ge 5.5 7.0 v i ces v ce = v ces , v ge = 0v 100 a note 2, t j = 125c 1.5 ma i ges v ce = 0v, v ge = 20v 500 na v ce(sat) i c = i c 110 , v ge = 15v, note 1 2.4 3.2 v t j = 125c 3.0 v t fi(typ) = 425ns features silicon chip on direct-copper bond (dcb) substrate isolated mounting surface 4000v~ electrical isolation ul recognized package high peak current capability low saturation voltage molding epoxies meet ul 94 v-0 flammability classification advantages high power density easy to mount applications capacitor discharge pulser circuits ( electrically isolated tab)
ixys reserves the right to change limits, test conditions, and dimensions. IXEL40N400 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs i c = i c110 , v ce = 10v, note 1 14 24 s i sc i c = i c110 , v cc = 3400v, v cm < 4000v 200 a v ge = 15v, t sc < 10 s c ies 6040 pf c oes v ce = 25v, v ge = 0v, f = 1mhz 278 pf c res 120 pf r gint 5.2 q g(on) 275 nc q ge i c = i c110 , v ge = 15v, v ce = 1000 v 63 nc q gc 134 nc t d(on) 160 ns t ri 100 ns e on 55 mj t d(off) 630 ns t fi 425 ns e off 165 mj t d(on) 155 ns t ri 105 ns e on 85 mj t d(off) 715 ns t fi 455 ns e off 205 mj r thjc 0.26 c/w r thck (pressure mount) 0.15 c/w ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 isoplus i5-pak tm hv outline pin 1 = gate pin 2 = emitter pin 3 = collector tab 4 = isolated sym inches millimeter min max min max a 0.190 0.205 4.83 5.21 a1 0.102 0.118 2.59 3.00 a2 0.046 0.055 1.17 1.40 b 0.045 0.055 1.14 1.40 b1 0.063 0.072 1.60 1.83 b2 0.058 0.068 1.47 1.73 c 0.020 0.029 0.51 0.74 d 1.020 1.040 25.91 26.42 e 0.770 0.799 19.56 20.29 e 0.150 bsc 3.81 bsc e1 0.450 bsc 11.43 bsc l 0.780 0.820 19.81 20.83 l1 0.080 0.102 2.03 2.59 q 0.210 0.235 5.33 5.97 q1 0.490 0.513 12.45 13.03 r 0.150 0.180 3.81 4.57 r1 0.100 0.130 2.54 3.30 s 0.668 0.690 16.97 17.53 t 0.801 0.821 20.34 20.85 u 0.065 0.080 1.65 2.03 e1 e1 3 1 2 c e b3 s b2 b1 e 4 + inductive load, t j = 25c i c = i c110 , v ge = 15v v ce = 2800v, r g = 33 note 3 inductive load, t j = 125c i c = i c110 , v ge = 15v v ce = 2800v, r g = 33 note 3 notes: 1. pulse test, t 300 s, duty cycle, d 2%. 2. part must be heatsunk for high-temp i ces measurement. 3. switching times & energy losses may increase for higher v ce (clamp), t j or r g .
? 2012 ixys corporation, all rights reserved IXEL40N400 fig. 1. output characteristics @ t j = 25oc 0 10 20 30 40 50 60 70 80 0 0.5 1 1.5 2 2.5 3 3.5 4 v ce - volts i c - amperes v ge = 25v 21v 19v 17v 15v 9v 11 v 13 v fig. 2. extended output characteristics @ t j = 25oc 0 50 100 150 200 250 300 0 5 10 15 20 25 30 v ce - volts i c - amperes v ge = 25 v 21 v 19v 11 v 15 v 13 v 9 v 17 v fig. 3. output characteristics @ t j = 125oc 0 10 20 30 40 50 60 70 80 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 v ce - volts i c - amperes 11 v 9 v 13 v 7 v v ge = 25v 21v 19v 17v 15v fig. 4. dependence of v ce(sat) on junction temperature 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade v ce(sat) - normalized v ge = 15 v i c = 80 a i c = 20 a i c = 40 a fig. 5. collector-to-emitter voltage vs. gate-to-emitter voltage 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 9 1113151719212325 v ge - volts v ce - volts i c = 80 a t j = 25oc 40 a 20 a fig. 6. input admittance 0 20 40 60 80 100 120 140 160 180 200 5 6 7 8 9 10 11 12 13 14 15 16 v ge - volts i c - amperes t j = - 40oc 25oc 125oc
ixys reserves the right to change limits, test conditions, and dimensions. IXEL40N400 fig. 7. transconductance 0 5 10 15 20 25 30 35 40 45 0 50 100 150 200 i c - amperes g f s - siemens t j = - 40oc 25oc 125oc fig. 10. reverse-bias safe operating area 0 20 40 60 80 100 120 140 160 180 500 1000 1500 2000 2500 3000 3500 4000 v ce - volts i c - amperes t j = 125oc r g = 33 ? dv / dt < 10v / ns fig. 11. maximum transient thermal impedance 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 100 pulse width - seconds z (th)jc - oc / w fig. 8. gate charge 0 2 4 6 8 10 12 14 16 0 40 80 120 160 200 240 280 q g - nanocoulombs v ge - volts v ce = 1000v i c = 40a i g = 10ma fig. 9. capacitance 10 100 1,000 10,000 100,000 0 5 10 15 20 25 30 35 40 v ce - volts capacitance - picofarads f = 1 mh z c ies c oes c res
? 2012 ixys corporation, all rights reserved IXEL40N400 ixys ref: el_40n400 9-27-12 fig. 12. typ. swicthing characteristics vs. collector current 0.00 0.04 0.08 0.12 0.16 0.20 0.24 0.28 0.32 0.36 0.40 0 102030405060708090 i c - amperes e on, eoff - joule e off e on v cc = 2800v, r g = 33 ? v ge = 15v, t j = 125oc fig. 13. typ. swicthing characteristics vs. gate resistor 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0 50 100 150 200 250 r g - ohms e on, eoff - joule e off e on v cc = 2800v, i c = 40a v ge = 15v, t j = 125oc
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